NUMERICAL ANALYSIS METHOD FOR 3-DIMENSIONAL ION INJECTION HAVING EFFECTIVE CALCULATION TIME

摘要

PURPOSE: A numerical analysis method for a 3-dimensional ion injection is provided to effectively enable a simulation with respect to a complicate structure where deposition and etching process is applied as well as a flat silicon layer. CONSTITUTION: In a numerical analysis method for a 3-dimensional ion injection having an effective calculation time, an ion distribution replica method is first used to realize a 3-dimensional ion injection, then a layer determining algorithm is applied to perform a multi-layer ion injection calculation. Then, an ion injection process is performed with respect to a structure having a surface step difference. The numerical analysis can be applied in relation to other process simulators.