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METHOD OF PREPARING CHARGE FOR GROWING LANTHANUM-GALLIUM SILICATE MONOCRYSTALS

机译:硅酸镧镓镓单晶制备电荷的方法

摘要

FIELD: crystal growing. SUBSTANCE: method includes charging into crucible preliminarily synthesized material corresponding to composition La3Ga5SiO14 and creating protective atmosphere. Material is then melted and rotating oriented seeding material is brought into contact with the surface of melt, after which oriented crystal is drawn from melt. According to invention, addition of seed is preceded by allowing melt to stand for 30-32 h, protective atmosphere consists of argon of nitrogen mixture with 1-5 vol % oxygen added at total pressure 1.10-1.80 atm, and seed material is oriented lanthanum-gallium silicate crystal with orientation selected from 01.1 + / - 3 deg, 02.3 + / - 7 deg. EFFECT: enabled preparation of monocrystals at least 80 mm in diameter weighing more than 2 kg. 3 cl
机译:领域:晶体生长。实质:方法包括将与成分La 3 Ga 5 SiO 14 相对应的预先合成的坩埚装入坩埚中,并营造保护气氛。然后将材料熔化,使旋转的定向晶种材料与熔体表面接触,然后从熔体中抽出定向晶体。根据本发明,在添加种子之前,使熔体静置30-32小时,保护性气氛由氮气混合物的氩气和总体积为1.10-1.80atm的1-5vol%的氧气组成,并且种子材料是镧。 -硅酸镓晶体,其取向选自<01.1> +/- 3度,<02.3> +/- 7度。效果:能够制备直径至少80毫米,重量超过2千克的单晶。 3厘升

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