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method of etching of nuclear tracks in полипропилене

机译:u043f u043e u043b u0438 u043f u0440 u043e u043f u0438 u043b u0435 u043d u0435中的核径迹蚀刻方法

摘要

method of etching of nuclear tracks in u043fu043eu043bu0438u043fu0440u043eu043fu0438u043bu0435u043du0435, including processing of irradiated heavy loaded particles of polypropylene solution containing u0441u043eu0435u0434u0438u043du0435u043du0438 the hexavalent chromium with the fact that, in order to enhance the stability of emerging as a result of etching the porous structure and the increase of r u0435u0441u0443u0440u0441u0430 work u0442u0440u0430u0432u044fu0449u0435u0433u043e solutionprocessing of spent water solution u0445u0440u043eu043cu043eu0432u043eu0433u043e acetic concentration of 800 to 1000 g / l at a temperature of 60 100C within 6 - 170 min.
机译:u043f u043e u043b u0438 u043f u0440 u043e u043f u043f u043f u043b u0435 u043d u0435中的核径迹蚀刻方法,包括处理含有 u0441 u043e u0435 u0434 u0438 u043d u0435 u043d u0438具有以下事实:为了增强由于蚀刻多孔结构而出现的稳定性并增加r u0435 u0441 u0443 u0440 u0441 u0430工作 u0442 u0440 u0430 u0432 u044f u0449 u0435 u0433 u043e溶液处理废液 u0445 u0440 u043e u043c u043e u0432 u043e u0433 u043e乙酸浓度为800在60至100℃的温度下在6至170分钟内降至1000克/升。

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