首页> 外国专利> Photodetector, especially a photodiode array useful for optical data storage and transmission, image processing, pattern recognition and spectrometry, is produced by back face bonding of a thinned photodetector wafer to a contact substrate

Photodetector, especially a photodiode array useful for optical data storage and transmission, image processing, pattern recognition and spectrometry, is produced by back face bonding of a thinned photodetector wafer to a contact substrate

机译:光电探测器,特别是可用于光学数据存储和传输,图像处理,图案识别和光谱学的光电二极管阵列,是通过将薄型光电探测器晶片背面粘合到接触基板上而制成的

摘要

A photodetector production process, comprising back face bonding of a supported thinned photodetector wafer to a contact substrate having conductor lines and connection pads, is new. A photodetector production process comprises: (a) producing a substrate wafer (1) with a photosensitive region between two laterally spaced conductive regions (4, 5) on its front face; (b) bonding the wafer front face to an auxiliary support; (c) thinning the wafer back face down to (near) the conductive regions; (d) preparing a contact substrate having one or more contacting levels with conductor lines and connection areas for contacting the conductive regions (4, 5); (e) bonding the thinned wafer back face to the contact substrate such that the conductive regions lie above the connection areas; (f) removing the auxiliary support; and (g) producing electrical connections between the connection areas and the conductive regions.
机译:光电检测器的生产工艺是新的,该工艺包括将支撑的减薄光电检测器晶片背面粘合到具有导线和连接垫的接触基板上。一种光电探测器的生产工艺包括:(a)生产衬底晶片(1),该衬底晶片的正面上在两个横向隔开的导电区域(4、5)之间具有感光区域; (b)将晶片正面粘结到辅助支架上; (c)将晶片背面变薄到(靠近)导电区域; (d)准备具有与导体线和用于与导电区域(4、5)接触的连接区域的一个或多个接触层的接触基板; (e)将变薄的晶片背面粘结到接触衬底上,使得导电区域位于连接区域上方; (f)移走辅助支架; (g)在连接区域和导电区域之间产生电连接。

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