Different transistors, especially PMOS and NMOS transistors of CMOS ICs useful for chip cards, are produced in a semiconductor substrate using only two photo-levels instead of the usual five

摘要

Production of different transistors in a semiconductor substrate (1), comprises using only two photo-levels instead of the usual five. Production of different transistor types comprises: (a) applying a first insulating layer and then a conductive layer onto a semiconductor substrate (1) having first and second transistor type regions (3, 5); (b) using a photo-technique to apply a mask which exposes only the gate lines (14) in the first region (3); (c) using the mask for conductive layer removal or conversion into a second insulating layer (22) and for first conductivity type dopant introduction into the substrate; (d) using a photo-technique to apply a second mask which exposes only the gate lines (18) in the second region (5); and (e) using the mask for conductive layer removal or conversion into a second insulating layer (22) and for second conductivity type dopant introduction into the substrate. An Independent claim is also included for a transistor produced by the above process. Preferred Features: The conductive layer is a polysilicon layer.