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Ferromagnetic layer material, useful for a magnetic storage medium, comprises a bismuth-manganese film epitaxially grown on a substrate

机译:用于磁存储介质的铁磁层材料包括在衬底上外延生长的铋锰膜

摘要

A ferromagnetic layer material, comprises a bismuth and manganese containing film (2, 3) epitaxially grown on a substrate (1). An Independent claim is also included for production of the above ferromagnetic layer material. Preferred Features: The film is formed on a single crystal or polycrystalline substrate by a vapor, sputter and/or molecular beam epitaxy (MBE) deposition process comprising simultaneous epitaxial growth of bismuth (Bi) and manganese (Mn) or comprising epitaxial growth of a Bi-rich film, deposition of a Mn-rich film and heat treating at 150-300 deg C.
机译:一种铁磁层材料,包括在衬底(1)上外延生长的含铋和锰的膜(2、3)。还包括独立权利要求以生产上述铁磁层材料。优选特征:该膜通过气相,溅射和/或分子束外延(MBE)沉积工艺形成在单晶或多晶衬底上,该工艺包括同时外延生长铋(Bi)和锰(Mn)或包括外延生长α(Bi)。富Bi膜,富Mn膜的沉积并在150-300摄氏度下进行热处理。

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