A ferromagnetic layer material, comprises a bismuth and manganese containing film (2, 3) epitaxially grown on a substrate (1). An Independent claim is also included for production of the above ferromagnetic layer material. Preferred Features: The film is formed on a single crystal or polycrystalline substrate by a vapor, sputter and/or molecular beam epitaxy (MBE) deposition process comprising simultaneous epitaxial growth of bismuth (Bi) and manganese (Mn) or comprising epitaxial growth of a Bi-rich film, deposition of a Mn-rich film and heat treating at 150-300 deg C.
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