DRAM cell capacitor production, especially for highly integrated DRAMs, comprises stabilizing the crystalline phase of a constricted HSG layer portion adjoining a storage node surface

摘要

DRAM cell capacitor production, comprises stabilizing the crystalline phase of a constricted HSG (hemispherical grain) layer (80) portion adjoining a storage node surface. DRAM cell capacitor production comprises: (a) forming a contact hole through an insulation interlayer (20) down to a semiconductor substrate (10); (b) forming and structuring a conductive layer in the contact hole and on the insulation interlayer (20) to form a storage node (27a); (c) coating the storage node with an HSG layer (80) having a constricted portion connected to the storage node; and (d) stabilizing the crystalline phase of the constricted portion and of the storage node surface. Preferred Features: Stabilization is effected by annealing in an oxygen atmosphere or applying an insulating layer of a natural or other oxide, nitride, Ta2O5 or TiO2. The conductive layer and the HSG layer (80) consist of amorphous silicon which is converted to a stable crystalline phase.