Substrate bias circuit, e.g. for noise suppression; has gate-controlled diode and detection transistor formed in floating trench of same conductivity as substrate contained within trench of opposite conductivity type

摘要

The circuit is formed in a semiconductor material (110) of given conductivity, by providing a trench (112) of opposite conductivity type, containing a trench (114) of the first conductivity type incorporating a gate-controlled diode (118) and a relatively-spaced detection transistor (128). A cell diode (142) is connected between the gate-controlled diode and earth. An oscillator (144) is coupled to the gate-controlled diode. An Independent claim is also included for a semiconductor material biasing method.