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Application element for redundancy technology for semiconductor storage devices and procedures for the production of semiconductor storage devices containing the same
Application element for redundancy technology for semiconductor storage devices and procedures for the production of semiconductor storage devices containing the same
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机译:用于半导体存储设备的冗余技术的应用元件以及包含该冗余技术的半导体存储设备的生产过程
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摘要
Improvement of a fuse for use in the redundancy technique particularly for a semiconductor memory device. The fuse is constituted by an MIS type transistor (150) having a gate insulating layer (107), which comprises at least two types of insulating films (102, 104, 106). Redundancy information is stored by shifting the threshold value of the MIS type transistor (150). IMAGE
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