manufacturing method for capacitor with stacked flossenstruktur and with reduced flossendicke

摘要

A method for fabricating a dynamic random access memory comprises the steps of forming a diffusion region (37) in a semiconductor substrate (31), providing an insulation layer (46) on the semiconductor substrate (31), forming a contact hole (47) in the insulation layer (46) to expose the diffusion region (37) at the contact hole (47), depositing a semiconductor layer (48) on the insulation layer (46) in the amorphous state such that the semiconductor layer (48) establishes an intimate contact with the exposed diffusion region (37) via the contact hole (47), patterning the semiconductor layer (48) to form a capacitor electrode (50), depositing a dielectric film (53) on the capacitor electrode (50) such that said dielectric film (53) covers the capacitor electrode (50); and depositing a semiconductor material to form an opposing electrode (54) such that the opposing electrode (54) buries the capacitor electrode (50) underneath while establishing an intimate contact with the dielectric film (53) that covers the capacitor electrode (50). IMAGE