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An optical semiconductor - mach - zehnder - modulator with multiple quanta sources

机译:具有多个量子源的光半导体马赫曾德尔调制器

摘要

PURPOSE: To provide a semiconductor Mach-Zehnder type modulator for optical communication and optical information processing which operates on a low voltage and is low in waveguide loss by using MOVPE selective growth technique. ;CONSTITUTION: A wafer which partially varies in band gap wavelengths is formed by one time of crystal growth if selective MOVPE growth is used. Easy varying of the band gap wavelength by ≥50meV by partially changing the width of a mask at the time of selective growth is possible. The band gap wavelength of a phase modulator part 122 is set on a slightly shorter wavelength side (λa) than the wavelength λOP of incident light. The band gap wavelength is settable at a wavelength of a small coefft. of absorption with the wavelength λOP of the incident light on the shorter wavelength side λa as 3dB branching part 121 and confluent part 123. Namely, the Mach-zehnder modulator of the low voltage and the low loss in realized at a good yield if the MOVPEs are selectively grown by using the mask of the width varying with the phase modulator part and 3dB branching part and confluent part and are set at the optimum band gap wavelengths.;COPYRIGHT: (C)1995,JPO
机译:目的:通过使用MOVPE选择性生长技术,提供一种用于低压通信且波导损耗低的用于光通信和光信息处理的半导体马赫曾德尔型调制器。 ;组成:如果使用选择性的MOVPE生长,则通过一次晶体生长形成带隙波长部分变化的晶片。通过在选择性生长时部分地改变掩模的宽度,可以容易地将带隙波长改变50geV。将相位调制器部分122的带隙波长设置在比入射光的波长λOP稍短的波长侧(λ a )上。带隙波长可设定为小系数的波长。入射光的波长λOP在较短波长侧 a 处作为3dB分支部分121和汇合部分123的吸收强度。即,低压的马赫曾德尔调制器和如果通过使用宽度随相位调制器部分和3dB分支部分和汇合部分而变化并设置在最佳带隙波长的掩模来选择性地生长MOVPEs,则可以实现低损耗且良品率高; COPYRIGHT:(C) 1995年

著录项

  • 公开/公告号DE69424395T2

    专利类型

  • 公开/公告日2000-10-12

    原文格式PDF

  • 申请/专利权人 NEC CORP. TOKIO/TOKYO;

    申请/专利号DE1994624395T

  • 发明设计人 KOMATSU KEIRO;

    申请日1994-12-27

  • 分类号G02F1/025;G02B6/13;G02F1/225;

  • 国家 DE

  • 入库时间 2022-08-22 01:40:32

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