METHOD FOR MANUFACTURING BICMOS INTEGRATED CIRCUITS ON A CLASSIC CMOS SUBSTRATE

摘要

P The invention relates to a method for manufacturing a BICMOS integrated circuit comprising an NPN transistor in a heavily P-type wafer (42) and coated with a lightly doped P-type layer (41), comprising forming a collector N (43) of a bipolar transistor; coating the structure with a priming layer of polycrystalline silicon (52) and opening above portions of manifold boxes; growing undoped and then doped P-type silicon to form a monocrystalline base region; deposit an insulating layer (61) and open it; depositing N-type emitter polycrystalline silicon (62) and etching it outside the useful zones; etch the base silicon outside the useful zones; forming spacers (72, 71, 73); and form a collector contact area (75) at the same time as the drain implantation of the N-channel MOS transistors. /P