Semiconductor component with scattering centers within a lateral resistor region

摘要

A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the surface of the semi- conductor component and it has a defined dopant concentration. Scattering centers are provided in the region of the lateral resistor which reduce a temperature dependency of the lateral resistor.