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Partially reconfigurable FPGA and method of operating same

机译:部分可重配置的fpga及其操作方法

摘要

A field programmable gate array (FPGA) having an array of configuration memory cells arranged in rows and columns. The configuration memory cells store configuration data values for configuring the FPGA. Each configuration memory cell is coupled to a corresponding row line through a corresponding cell access transistor. A row access circuit is coupled to the row lines. To re-program a first set (but not a second set) of configuration memory cells in a column, the row access circuit initially pre-charges each of the row lines, and then provides configuration data values on a first set (but not a second set) of the row lines. All cell access transistors in the column are coupled to a column select line. To avoid losing data in any memory cell, a relatively low read voltage, followed by a higher write voltage, is applied to the column select line. When the read voltage is applied to the column select line, the associated cell access transistors are weakly turned on. As a result, the row lines are charged to states which correspond to the configuration data values stored by the configuration memory cells. Consequently, when the write voltage is subsequently applied to the column select line, configuration data values stored by the second set of configuration memory cells are not disturbed.
机译:一种现场可编程门阵列(FPGA),具有以行和列排列的配置存储单元阵列。配置存储器单元存储用于配置FPGA的配置数据值。每个配置存储单元通过相应的单元存取晶体管耦合到相应的行线。行访问电路耦合到行线。为了对一列中的第一组(而非第二组)配置存储单元进行重新编程,行访问电路首先会对每条行线进行预充电,然后在第一组(而不是第二组)上提供配置数据值第二组)的行线。列中的所有单元存取晶体管都耦合到列选择线。为了避免丢失任何存储单元中的数据,向列选择线施加相对较低的读取电压,然后施加较高的写入电压。当读取电压施加到列选择线时,相关的单元存取晶体管被弱导通。结果,行线被充电到与由配置存储单元存储的配置数据值相对应的状态。因此,当随后将写入电压施加到列选择线时,由第二组配置存储单元存储的配置数据值不会受到干扰。

著录项

  • 公开/公告号US6057704A

    专利类型

  • 公开/公告日2000-05-02

    原文格式PDF

  • 申请/专利权人 XILINX INC.;

    申请/专利号US19970990154

  • 发明设计人 BERNARD J. NEW;CHARLES R. ERICKSON;

    申请日1997-12-12

  • 分类号H03K19/177;G06F7/38;G11C16/04;G11C8/00;

  • 国家 US

  • 入库时间 2022-08-22 01:37:17

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