首页>
外国专利>
Spacer formation for graded dopant profile having a triangular geometry
Spacer formation for graded dopant profile having a triangular geometry
展开▼
机译:具有三角形几何形状的渐变掺杂剂分布的间隔物形成
展开▼
页面导航
摘要
著录项
相似文献
摘要
The formation of a spacer for a graded dopant profile having a triangular geometry is disclosed. In one embodiment, a method has three steps. In the first step, a gate is formed on a substrate, the gate having two edges. In the second step, at least one spacer is formed, where each spacer is adjacent to an edge of the gate and has a triangular geometry. In the third step, an ion implantation is applied to form a graded lightly doped region within the substrate underneath each spacer, the region corresponding to the triangular geometry of the spacer.
展开▼