首页>
外国专利>
In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique
In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique
展开▼
机译:利用光谱技术监测等离子体刻蚀室状况的原位非侵入式方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A spectroscopic method is disclosed to provide a non-intrusive and in- situ monitoring of plasma etching conditions during the fabrication of semiconductor devices using RF power. It includes the steps of: (a) selecting a single plasma gas as a probe, in a cleaned plasma etch chamber; (b) measuring the spectral intensities of the plasma gas; and (c) plotting the measured spectral intensities either directly or indirectly against the RF time. A single plasma gas is selected which exhibits opposite relationships with RF time at two respective wavelengths.
展开▼