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Dielectric materials of amorphous compositions of TI-O.sub.2 doped with rare earth elements and devices employing same
Dielectric materials of amorphous compositions of TI-O.sub.2 doped with rare earth elements and devices employing same
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机译:掺有稀土元素的TI-O.2非晶态成分的介电材料及其装置
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摘要
A dielectric film useful for a capacitor in a DRAM device comprises an amorphous composition of Ti.sub.1-y M.sub.y O.sub.x, where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a lanthanide rare earth element and advantageously, selected from the group of neodymium (Nd), terbium (Tb) and dysprosium (Dy). The concentration of dopants in the a-TiO.sub.2 film is preferably from 5 to 50 at. % and more preferably from 10 to 30 at. %. The inventive dielectric materials have a high dielectric constant of greater than 30 and figure of merit of greater than 9.0 &mgr;C/cm.sup.2.
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机译:可用于DRAM器件中的电容器的介电膜包括Ti 1-y M y O x的非晶成分,其中y约在0.01至0.50的范围内,x约在1.0至0.50的范围内。 M为镧系稀土元素,且优选地选自钕(Nd),ter(Tb)和(Dy),且M为2.0。 α-TiO2膜中掺杂剂的浓度优选为5〜50at。%。 %,更优选10至30at。%。 %。本发明的介电材料具有大于30的高介电常数和大于9.0μC/ cm 2的品质因数。
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