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Method of forming a stress relieved amorphous tetrahedrally- coordinated carbon film

机译:形成应力消除的非晶四面体配位碳膜的方法

摘要

A stress-relieved amorphous-diamond film is formed by depositing an amorphous diamond film with specific atomic structure and bonding on to a substrate, and annealing the film at sufficiently high temperature to relieve the compressive stress in said film without significantly softening said film. The maximum annealing temperature is preferably on the order of 650° C., a much lower value than is expected from the annealing behavior of other materials.
机译:通过沉积具有特定原子结构的无定形金刚石膜并结合到基底上,并在足够高的温度下退火该膜以减轻所述膜中的压应力而不会显着软化所述膜,来形成应力消除的非晶金刚石膜。最大退火温度优选为650℃左右。 C.,比其他材料的退火行为所预期的低得多。

著录项

  • 公开/公告号US6103305A

    专利类型

  • 公开/公告日2000-08-15

    原文格式PDF

  • 申请/专利权人 SANDIA CORPORATION;

    申请/专利号US19990447523

  • 发明设计人 THOMAS A. FRIEDMANN;JOHN P. SULLIVAN;

    申请日1999-11-23

  • 分类号C23C16/26;B05D3/02;

  • 国家 US

  • 入库时间 2022-08-22 01:36:30

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