首页> 外国专利> Translator switch transistor with output voltage adjusted to match a reference by controlling gate and substrate charge pumps

Translator switch transistor with output voltage adjusted to match a reference by controlling gate and substrate charge pumps

机译:转换器开关晶体管,其输出电压通过控制栅极和衬底电荷泵而调整为与参考电压匹配

摘要

A voltage translator uses an n-channel translator transistor to translate an input voltage at its drain to an output voltage at its source. The gate and substrate of the translator transistor are each biased by charge pumps. A reference transistor is also biased by the charge pumps. A reference input voltage is translated to a reference output voltage by the reference transistor. The reference output voltage is compared to a target output voltage by comparators. When the reference output voltage is below the target, the gate charge pump is turned on, raising the gate voltage to both the reference and translator transistors. The higher gate voltage VGATE raises the output voltage VOUT since VOUT=VGATE-VT for a transistor in saturation. When the reference output voltage is above the target, the substrate charge pump is turned on, pulling the substrate bias voltage below ground. The body effect causes the transistor threshold VT to increase as the substrate is pumped. The higher threshold lowers the output voltage. Once the reference output voltage reaches the target, the charge pumps turn off. The input voltage can toggle high and low since the reference transistor sets the gate and substrate voltages.
机译:电压转换器使用n沟道转换器晶体管将其漏极处的输入电压转换为其源极处的输出电压。转换晶体管的栅极和衬底均由电荷泵偏置。参考晶体管也被电荷泵偏置。参考输入电压被参考晶体管转换为参考输出电压。比较器将参考输出电压与目标输出电压进行比较。当参考输出电压低于目标电压时,栅极电荷泵将打开,从而同时提高参考晶体管和转换晶体管的栅极电压。由于对于处于饱和状态的晶体管,VOUT = VGATE-VT,因此较高的栅极电压VGATE升高了输出电压VOUT。当参考输出电压高于目标电压时,将打开衬底电荷泵,将衬底偏置电压拉至地电位以下。体效应导致晶体管阈值VT随着泵浦衬底的增加而增加。较高的阈值会降低输出电压。一旦参考输出电压达到目标,电荷泵就会关闭。由于参考晶体管设置栅极和衬底电压,因此输入电压可以高低切换。

著录项

  • 公开/公告号US6114876A

    专利类型

  • 公开/公告日2000-09-05

    原文格式PDF

  • 申请/专利权人 PERICOM SEMICONDUCTOR CORP.;

    申请/专利号US19990315775

  • 发明设计人 ALEX CHI-MING HUI;DAVID KWONG;

    申请日1999-05-20

  • 分类号H03K19/0175;

  • 国家 US

  • 入库时间 2022-08-22 01:36:18

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