Metal electrode mask in a method of fault failure analysis and characterization of semiconductor devices

摘要

With regard to a method for fault or failure analysis of a fault or failure phenomenon caused by a leakage current, or a method for characterization of semiconductor devices, pre-treatment is conducted to check a leakage point of the semiconductor devices covered by a conductive film. The pre-treatment includes a step of forming a metal film having a lower etching rate than a conductive film over a part of the conductive film. The metal film is used as a mask for forming a nonetching area on the conductive film, when the conductive film is etched. The metal film is also used as an electrode pad to be applied a potential at the characterization of the semiconductor devices.