Solid-state RF power amplifier with improved efficiency and reduced distortion

摘要

An RF power device including a DMOS field effect transistor has increased efficiency and reduced distortion. A capacitor is connected between the gate and source input of the transistor which swamps non-linear variations of the parasitic capacitance (CGD) between the gate and drain, thereby offsetting the Miller effect of the feedback provided by the MOS transistor parasitic capacitance. The capacitor, the Ciss of the MOS transistor, and the inductance of input leads provide a device input resonant frequency between the input signal fundamental frequency and the first harmonic. IMAGE