Three-dimensional non-contact non-volatile memory cell and method of manufacturing the same

摘要

A three-dimensional contactless non-volatile memory cell is described. The memory cell comprises a substrate, source/drain regions that function as buried bit-lines and define a channel therebetween, a floating gate disposed above and insulated from the channel, and a control gate disposed above and insulated from the floating gate. The floating gate is formed to an adequate thickness so as to allow capacitive coupling to the control gate along the vertical regions of the floating gate. Thus, a reduction in minimum cell size can be achieved by decreasing the lateral dimensions of the cell without compromising the total capacitive coupling area. Subsequently, a substantial reduction in the total array area and a corresponding increase in device density can be realized. Further features of the invention include elimination of thick oxide regions in the array and improved gate oxide quality.