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Improve dynamic characteristics FET, IGBT and MCT structure, and its production manner
Improve dynamic characteristics FET, IGBT and MCT structure, and its production manner
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机译:改善FET,IGBT和MCT结构的动态特性及其生产方式
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摘要
Doping of the P type base region in a MOS Field Effect Transistor or an Insulated Gate Bipolar Transistor with a combination of boron and one or more of indium, aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of the structure without requiring counter doping of the channel. The doping level of the emitter of a MOS Controlled Thyristor is kept high everywhere except in the channel in order to provide a fast turn-off time for the MCT.
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