Formation manner null of optical resonance aspect of nitride semiconductor laser

摘要

PURPOSE: To put the face of a split nitride semiconductor layer kept apparently cleaved and to form an optical resonance plane out of it by forming first and second split grooves and by splitting a wafer by pressing at a position along these grooves. ;CONSTITUTION: A wafer has a structure constructed by laminating sequentially an n-type layer 2, an active layer 3 and a p-type layer 4, which are constituted of nitride semiconductors respectively, on a sapphire substrate 1, basically. A first split groove 10 is formed by etching the stripe-shaped p-type layer 4 to a depth not reaching the active layer 3. On the other hand, a second split groove 20 is formed on the side of the sapphire substrate 1 free of nitride semiconductors. Since the first split groove 10 opposed to the second split groove 20 is formed in the surface of the p-type layer 4, a straight split is easy to make between the first split groove 10 and the second split groove 20. Even in the nitride semiconductor layer having no cleavability, therefore, a split face turns apparently cleaved and thus optical resonance planes being parallel mutually are formed easily.;COPYRIGHT: (C)1996,JPO