Production manner null of hydrogenation amorphous silicon thin film

摘要

PURPOSE: To prevent the degradation of properties of a semiconductor layer by forming it after effects of the source gas of a gate oxide are eliminated. ;CONSTITUTION: The surface of a gate oxide 3 is treated in a very weak hydrogen plasma until the source gas for the gate oxide (NH₃ and N₂), remaining in a vacuum chamber, has no effects on the formation of a semiconductor layer 4. This maintains the surface of the gate oxide chemically active, thereby preventing defects. After the effect of the remaining gas is removed (about 10 minutes), SiH₄ is introduced at 40sccm, 0.5Torr and 0.4W/cm² in power density to form a semiconductor layer 4 of about 3000Å on the gate oxide 3. As a result, the semiconductor layer undergoes no degradation of its properties.;COPYRIGHT: (C)1993,JPO&Japio