Frequency characteristics measurement of the dielectric thin film

摘要

PURPOSE: To accurately measure high frequency characteristics of a dielectric thin film by forming measuring elements having a measuring dielectric thin film and a measuring upper electrode layer similar to a measuring lower electrode layer and a dielectric thin film on a substrate corresponding to a semiconductor substrate. ;CONSTITUTION: A correction element DC1 having a first upper electrode layer for correction EUC1 is formed on a substrate BB and the high frequency characteristics observed between a lower electrode layer for correction ELC1 and the upper electrode layer for the correction EUC1 are measure as well as the case of the measuring of a measuring element DM. In addition, a correction element DC2 having a second upper electrode layer for correction EUC2 is formed, and the high frequency characteristics observed between a lower electrode layer for correction ELC2 and the upper electrode layer for the correction EUC2 are measured as well as the case of the measuring of the measuring element DM. And a measured result of the measuring element DM is corrected in accordance with the measured results of the first correction element DC1 and the second correction element DC2, and it is used as the measured result of the high frequency characteristics of the measuring element DM.;COPYRIGHT: (C)1996,JPO