首页> 外国专利> MAGNETO-RESISTIVE SENSOR, THIN FILM MAGNETIC HEAD PROVIDED WITH MAGNETO-RESISTIVE, SENSOR, METHOD FOR MANUFACTURING MAGNETO-RESISTIVE SENSOR AND METHOD FOR MANUFACTURING THIN FILM MAGNETIC HEAD

MAGNETO-RESISTIVE SENSOR, THIN FILM MAGNETIC HEAD PROVIDED WITH MAGNETO-RESISTIVE, SENSOR, METHOD FOR MANUFACTURING MAGNETO-RESISTIVE SENSOR AND METHOD FOR MANUFACTURING THIN FILM MAGNETIC HEAD

机译:磁阻传感器,具有磁阻的薄膜磁头,传感器,制造磁阻传感器的方法和制造薄膜磁头的方法

摘要

PROBLEM TO BE SOLVED: To provide a MR sensor capable of preventing the deterioration of an yield based on insufficiency of withstand voltage of a shield insulating film, a thin film magnetic head provided with the MR sensor, a method for manufacturing the MR sensor capable of enhancing the withstand voltage of the shield insulating film without remarkably increasing manufacturing stages and a method for manufacturing the thin film magnetic head.;SOLUTION: The MR sensor is provided with a MR film formed between a lower shielding layer and an upper shielding layer through a first lower insulating layer and a first upper insulating layer respectively, a pair of lead conductor layers formed between the lower shielding layer and the upper shielding layer through the first lower insulating layer and the first upper insulating layer respectively and respectively connected to the both ends of the MR film and a second upper insulating layer formed on the pair of lead conductor layers and having the nearly same pattern shape that the lead conductor layers have.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:为了提供一种能够防止由于屏蔽绝缘膜的耐压不足而导致的成品率降低的MR传感器,一种具有该MR传感器的薄膜磁头,一种能够制造出MR传感器的方法。在不显着增加制造步骤的情况下提高屏蔽绝缘膜的耐压的方法以及薄膜磁头的制造方法。解决方案:MR传感器通过下层屏蔽层和上层屏蔽层之间的MR膜形成第一下部绝缘层和第一上部绝缘层,分别通过第一下部绝缘层和第一上部绝缘层形成在下部屏蔽层和上部屏蔽层之间的一对引线导体层,并分别连接到MR膜和第二上绝缘层形成在一对引线导体层上,并具有导线导体层具有几乎相同的图案形状。;版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001229510A

    专利类型

  • 公开/公告日2001-08-24

    原文格式PDF

  • 申请/专利权人 TDK CORP;

    申请/专利号JP20000033441

  • 发明设计人 UEJIMA SATOSHI;

    申请日2000-02-10

  • 分类号G11B5/39;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:39

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