首页> 外国专利> SEMICONDUCTOR DEVICE HAVING Cu-BASED EMBEDDED WIRING AND PULSE PLATING METHOD OF Cu-BASED EMBEDDED WIRING

SEMICONDUCTOR DEVICE HAVING Cu-BASED EMBEDDED WIRING AND PULSE PLATING METHOD OF Cu-BASED EMBEDDED WIRING

机译:具有基于铜的嵌入式布线的半导体器件和基于铜的嵌入式布线的脉冲布置方法

摘要

PROBLEM TO BE SOLVED: To perform Cu-based embedded wiring which is superior in adhesive ness and embedding at low cost, in a semiconductor device having Cu-based embedded wiring and a pulse plating method of Cu-based embedded wiring.;SOLUTION: A Cu alloy layer is provided between a barrier metal and an alloy composed of either Cu or an alloy whose main component is Cu.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:在具有基于铜的嵌入式布线和基于铜的嵌入式布线的脉冲镀覆方法的半导体器件中,为了执行粘合性优异且低成本嵌入的基于铜的嵌入式布线;解决方案:A铜合金层设置在阻挡金属和由铜或主要成分为铜的合金组成的合金之间; COPYRIGHT:(C)2001,JPO

著录项

  • 公开/公告号JP2001230252A

    专利类型

  • 公开/公告日2001-08-24

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20000037414

  • 发明设计人 KAMIYOSHI GOJI;

    申请日2000-02-16

  • 分类号H01L21/3205;H01L21/288;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:30

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