首页> 外国专利> CATHODE FOR PHOTOELECTRON OR SECONDARY ELECTRON EMISSION, PHOTOMULTIPLIER TUBE AND ELECTRONMULTIPLIER TUBE

CATHODE FOR PHOTOELECTRON OR SECONDARY ELECTRON EMISSION, PHOTOMULTIPLIER TUBE AND ELECTRONMULTIPLIER TUBE

机译:光电或二次电子发射,光电倍增管和电子倍增管的阴极

摘要

PROBLEM TO BE SOLVED: To provide a cathode for photoelectron or secondary electron emission in which quantum efficiency, more particularly red color sensitivity can be improved and the spectrophoto sensitivity or secondary electron emission property can be improved. ;SOLUTION: In cathode 5 for photoelectron emission, a photoelectron surface 5d formed from materials such as alkali antimony compound which discharges photoelectrons by incident of light or secondary electrons by incident of electrons is provided on Ni electrode substrate 5c in which Al layer 5b is vapor deposited. An intermediate layer 5a formed from carbon nano tube is disposed between the photoelectron surface 5d and the Ni electrode substrate 5c. Therefore, defect density inside of particles is lowered and recombination ration of electron and positive hole is remarkably lowered to improve quantum efficiency.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种用于光电子或二次电子发射的阴极,其中可以提高量子效率,尤其是可以提高红色灵敏度,并且可以提高分光光度或二次电子发射性能。 ;解决方案:在用于光电子发射的阴极5中,在其中Al层5b为蒸气的Ni电极基板5c上设置有由碱锑化合物等材料形成的光电子表面5d,该碱锑化合物通过光的入射而释放光电子或通过电子的入射而释放光电子。存放。由碳纳米管形成的中间层5a设置在光电子表面5d与Ni电极基板5c之间。因此,降低了粒子内部的缺陷密度,并显着降低了电子与空穴的复合率,从而提高了量子效率。;版权所有:(C)2001,日本特许厅

著录项

  • 公开/公告号JP2001202873A

    专利类型

  • 公开/公告日2001-07-27

    原文格式PDF

  • 申请/专利权人 HAMAMATSU PHOTONICS KK;

    申请/专利号JP20000007972

  • 申请日2000-01-17

  • 分类号H01J1/34;H01J1/32;H01J40/06;H01J43/08;H01J43/18;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:24

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