首页> 外国专利> COLD-CATHODE FIELD-ELECTRON EMISSION ELEMENT AND ITS MANUFACTURING METHOD, AND COLD-CATHODE FIELD-ELECTRON EMISSION DISPLAY UNIT AND ITS MANUFACTURING METHOD

COLD-CATHODE FIELD-ELECTRON EMISSION ELEMENT AND ITS MANUFACTURING METHOD, AND COLD-CATHODE FIELD-ELECTRON EMISSION DISPLAY UNIT AND ITS MANUFACTURING METHOD

机译:冷阴极场电子发射元件及其制造方法,冷阴极场电子发射显示器及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a cold-cathode field-electron emission element not using a metal with high melting point and equipped with electron emitting electrode that can achieve an excelled electron emission efficiency and a long lifetime with a simple shape. ;SOLUTION: The cold-cathode field-electron emission element of this invention is equipped with (A) cathode electrode 13 formed on a support 10, (B) an insulation layer 15 formed on the support 10 including the cathode 13, (C) gate electrode 16 formed on the insulation layer 15, (D) an opening 18 penetrating the gate electrode 16 and inslating layer 15, and (E) an electron emitting electrode 21 composed of a (Sr, Ba, Ca)CO3 layer that is formed on the cathode 13 located at the bottom of the opening 18.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种不使用具有高熔点的金属并且配备有能够以优异的形状实现优异的电子发射效率和长寿命的电子发射电极的冷阴极场电子发射元件。 ;解决方案:本发明的冷阴极场电子发射元件配备有(A)在支撑体10上形成的阴极电极13,(B)在包含阴极13的支撑体10上形成的绝缘层15,(C)在绝缘层15上形成的栅电极16,(D)穿过栅电极16和绝缘层15的开口18,以及(E)由(Sr,Ba,Ca)CO 3层构成的电子发射电极21在位于开口18底部的阴极13上;版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001110301A

    专利类型

  • 公开/公告日2001-04-20

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP19990289638

  • 发明设计人 SAITO ICHIRO;INOUE KOJI;

    申请日1999-10-12

  • 分类号H01J1/304;H01J9/02;H01J9/44;H01J31/12;

  • 国家 JP

  • 入库时间 2022-08-22 01:29:56

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