首页> 外国专利> Proximity effect amendment manner, SCALPEL (registered trade mark (registration number 4274961))Exposure device, and SCALPEL (registered trade mark (registration number 4274961))Mask

Proximity effect amendment manner, SCALPEL (registered trade mark (registration number 4274961))Exposure device, and SCALPEL (registered trade mark (registration number 4274961))Mask

机译:接近效果修正方式,SCALPEL(注册商标(注册号4274961))曝光装置和SCALPEL(注册商标(注册号4274961))

摘要

PROBLEM TO BE SOLVED: To provide a proximity effect correcting method wherein, responding to the pattern to be formed on a wafer, its exposure amount (does) can be adjusted. ;SOLUTION: A SCALPEL mask 10 has an electron transmitting portion 11, and has an electron scattering portion 12 of a desired mask pattern formed on its front surface side. Further, the SCALPEL mask 10 has a mesh-form scatterer 13 formed on its rear surface side. This mesh-form scatterer 13 can screen one portion of a current. The mesh of this mesh-form scatterer 13 is formed in the size in whose extent the pattern of the mesh is not formed on a wafer. Moreover, in the place of the wafer having a dense pattern, also the mesh is made dense, and in the place of the wafer having a coarse pattern, also the mesh is made coarse.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种邻近效应校正方法,其中,响应于要在晶片上形成的图案,可以调节其曝光量(确实)。 ;解决方案:SCALPEL掩模10具有电子透射部分11,并且具有在其前表面侧上形成的期望掩模图案的电子散射部分12。此外,SCALPEL掩模10在其背面侧上形成有网状的散射体13。该网状散射体13可以屏蔽一部分电流。该网眼状的散射体13的网眼形成为在晶片上未形成网眼的图案的程度的大小。此外,在具有致密图案的晶片的位置处,也使网孔致密,并且在具有粗略图案的晶片的位置处,也使网孔粗糙。COPYRIGHT:(C)2000,JPO

著录项

  • 公开/公告号JP3117009B2

    专利类型

  • 公开/公告日2000-12-11

    原文格式PDF

  • 申请/专利权人 日本電気株式会社;

    申请/专利号JP19980259927

  • 发明设计人 依馬 貴弘;

    申请日1998-09-14

  • 分类号H01L21/027;G03F1/16;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-22 01:29:46

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