首页> 外国专利> VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND SURFACE EMITTING SEMICONDUCTOR LASER ARRAY

VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND SURFACE EMITTING SEMICONDUCTOR LASER ARRAY

机译:垂直腔面发射半导体激光器和面发射半导体激光器阵列

摘要

PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting semiconductor laser and a surface emitting semiconductor laser array capable of controlling the polarization direction of laser beams. SOLUTION: In the surface emission semiconductor laser 100 in which a resonator 120 is formed on a semiconductor substrate 101 in the vertical direction and laser beams are projected in the vertical direction to the semiconductor substrate 101 from the resonator 120, the laser 100 contains a columnar section 110 as a part of the resonator 120 and an insulating layer 112 formed while being brought into contact with the external surface of the columnar section 110, and the insulating layer 112 has anisotropic stress resulting fro the plane shape of the insulating layer and controls the polarization direction of laser beams by the anisotropic stress.
机译:解决的问题:提供一种能够控制激光束的偏振方向的垂直腔表面发射半导体激光器和表面发射半导体激光器阵列。 SOLUTION:在表面发射半导体激光器100中,谐振器120沿垂直方向形成在半导体衬底101上,并且激光束从谐振器120沿垂直方向投射到半导体衬底101上,激光器100包含柱状作为谐振器120一部分的部分110和形成为与柱状部分110的外表面接触的绝缘层112,并且绝缘层112具有各向异性应力,该各向异性应力产生于绝缘层的平面形状并且控制绝缘层112的平面形状。各向异性应力引起的激光束偏振方向。

著录项

  • 公开/公告号JP2001189525A

    专利类型

  • 公开/公告日2001-07-10

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP19990374785

  • 申请日1999-12-28

  • 分类号H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:16

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