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Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch
Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch
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机译:使用过渡金属掺杂的II-VI族半导体作为无源可饱和吸收器Q开关的人眼安全激光系统
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摘要
An eyesafe laser system (2) includes a Q-switch crystal (20) formed of a semiconductor host material having noncentrosymmetric tetrahedral substitutional sites doped with transition metal ions in concentrations from about 0.001 to about 0.10 atomic percent, which functions as to be a saturable absorber of light at eyesafe wavelengths with a relatively long relaxation lifetime. Co2+:ZnSe has been demonstrated to have advantageously high relaxation lifetime at both 1.54 mu m (Er:glass laser) and 1.64 mu m (Er:YAG laser). Other candidate host materials include other zinc chalcogenides, cadmium chalcogenides and zinc oxide. The resultant Q-switch (20) does not require additional focusing optics inside the cavity (4) and has a saturation fluence which is approximately one order of magnitude less than other state of the art saturable absorbers in the "eyesafe" wavelength region, thereby permitting substantially faster Q-switch bleaching, lower thermal loads, and less potential for damage than was hitherto possible. IMAGE
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