首页> 外国专利> Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch

Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch

机译:使用过渡金属掺杂的II-VI族半导体作为无源可饱和吸收器Q开关的人眼安全激光系统

摘要

An eyesafe laser system (2) includes a Q-switch crystal (20) formed of a semiconductor host material having noncentrosymmetric tetrahedral substitutional sites doped with transition metal ions in concentrations from about 0.001 to about 0.10 atomic percent, which functions as to be a saturable absorber of light at eyesafe wavelengths with a relatively long relaxation lifetime. Co2+:ZnSe has been demonstrated to have advantageously high relaxation lifetime at both 1.54 mu m (Er:glass laser) and 1.64 mu m (Er:YAG laser). Other candidate host materials include other zinc chalcogenides, cadmium chalcogenides and zinc oxide. The resultant Q-switch (20) does not require additional focusing optics inside the cavity (4) and has a saturation fluence which is approximately one order of magnitude less than other state of the art saturable absorbers in the "eyesafe" wavelength region, thereby permitting substantially faster Q-switch bleaching, lower thermal loads, and less potential for damage than was hitherto possible. IMAGE
机译:人眼安全激光系统(2)包括由半导体主体材料形成的Q开关晶体(20),该半导体主体材料具有浓度为0.001%至约0.10原子%的过渡金属离子掺杂的非中心对称四面体取代位点,其功能是可饱和的眼睛安全波长的光吸收剂,具有相对较长的弛豫寿命。已证明Co 2+:ZnSe在1.54μm(Er:玻璃激光)和1.64μm(Er:YAG激光)下均具有有利的高弛豫寿命。其他候选主体材料包括其他硫属元素锌,硫属元素镉和氧化锌。所得的Q开关(20)在腔(4)内不需要附加的聚焦光学器件,其饱和通量比“眼动”波长范围内的其他现有技术的可饱和吸收体小大约一个数量级,从而与迄今可能的情况相比,可大大加快Q开关的漂白速度,降低热负荷并减少损坏的可能性。 <图像>

著录项

  • 公开/公告号IL123027A

    专利类型

  • 公开/公告日2000-12-06

    原文格式PDF

  • 申请/专利权人 RAYTHEON COMPANY;

    申请/专利号IL19980123027

  • 发明设计人

    申请日1998-01-22

  • 分类号H01S3/113;

  • 国家 IL

  • 入库时间 2022-08-22 01:25:07

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