首页> 外国专利> AN INTEGRATED RF SWITCHING CELL BUILT IN CMOS TECHNOLOGY AND UTILIZING A HIGH VOLTAGE INTEGRATED CIRCUIT DIODE WITH A CHARGE INJECTING NODE

AN INTEGRATED RF SWITCHING CELL BUILT IN CMOS TECHNOLOGY AND UTILIZING A HIGH VOLTAGE INTEGRATED CIRCUIT DIODE WITH A CHARGE INJECTING NODE

机译:CMOS技术中的集成式射频开关单元,并利用带电荷注入节点的高压集成式电路二极管

摘要

An integrated CMOS diode with an injection ring that enables construction of anintegrated CMOS RF switch. Construction techniques of using a diffused n-wellresistor, parasitic capacitance and construction of the diode underneath a bonding inputpad contribute to performance of the switch as well as saving space needed toconstruct the switch.19
机译:带有注入环的集成CMOS二极管,可构建一个集成CMOS RF开关。使用扩散n阱的构造技术电阻,寄生电容以及在键合输入下方的二极管结构垫有助于开关的性能以及节省所需的空间构造开关。19

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