首页>
外国专利>
AN INTEGRATED RF SWITCHING CELL BUILT IN CMOS TECHNOLOGY AND UTILIZING A HIGH VOLTAGE INTEGRATED CIRCUIT DIODE WITH A CHARGE INJECTING NODE
AN INTEGRATED RF SWITCHING CELL BUILT IN CMOS TECHNOLOGY AND UTILIZING A HIGH VOLTAGE INTEGRATED CIRCUIT DIODE WITH A CHARGE INJECTING NODE
展开▼
机译:CMOS技术中的集成式射频开关单元,并利用带电荷注入节点的高压集成式电路二极管
展开▼
页面导航
摘要
著录项
相似文献
摘要
An integrated CMOS diode with an injection ring that enables construction of anintegrated CMOS RF switch. Construction techniques of using a diffused n-wellresistor, parasitic capacitance and construction of the diode underneath a bonding inputpad contribute to performance of the switch as well as saving space needed toconstruct the switch.19
展开▼