PLASMA PROCESS TO DEPOSIT SILICON NITRIDE WITH HIGH FILM QUALITY AND LOW HYDROGEN CONTENT

摘要

A high-quality plasma CVD nitride layer is formed at a process temperature of between 400 DEG C and 600 DEG C from a precursor gas including silane and nitrogen. The improved nitride layer is used as an etch stop layer, a spacer, and as a lining layer for shallow trench isolation and in a pre-metal dielectric layer.