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POLYMER WAVEGUIDE GRATING WAVELENGTH DIVISION OPTICAL DEVICE INTEGRATED WITH OPTICAL DETECTOR USING GALLIUM ARSENIDE BOARD AND FABRICATION METHOD THEREOF
POLYMER WAVEGUIDE GRATING WAVELENGTH DIVISION OPTICAL DEVICE INTEGRATED WITH OPTICAL DETECTOR USING GALLIUM ARSENIDE BOARD AND FABRICATION METHOD THEREOF
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机译:砷化镓板集成光检测器的聚合物波导光栅级分光学器件及其制备方法
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摘要
PURPOSE: A polymer waveguide grating wavelength division optical device using a GaAs board and a fabrication method thereof are provided to improve the property of the device, and to achieve the integration with the other active device. CONSTITUTION: A n-GaAs lower clad layer(2), an i-lnGaAs absorption layer(3), a p-GaAs upper clad layer(4), and a p-lnGaAs layer(5) are formed on a n-GaAs substrate using a semiconductor thin film deposition equipment for forming an optical detector device. A waveguide of the optical detector device is patterned using an optical etching method. The area around the pattern is coated using a polyimide, thereby limiting the electric property of the optical detector device. A p-ohmic metal layer is formed on the optical detector device, and a n-ohmic metal layer(8) is formed under the optical detector device. A SiNx thin film is deposited on the whole GaAs substrate. A polymer optical waveguide lower clad layer(9), a polymer optical waveguide core layer(10), and a polymer optical waveguide upper clad layer(12) are successively formed using a spin coating method. The polymer material deposited on the optical detector device and the SiNx thin film are removed using a BOE etching solution. A cross section for input and output of a light wave is formed using a cleaving method and a polishing method. In this way, the fabrication of the optical detector device is completed.
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