首页> 外国专利> COLD CATHODE FIELD EMISSION DEVICE AND METHOD OF PRODUCING THE SAME AND COLD CATHODE FIELD EMISSION DISPLAY

COLD CATHODE FIELD EMISSION DEVICE AND METHOD OF PRODUCING THE SAME AND COLD CATHODE FIELD EMISSION DISPLAY

机译:阴极冷阴极场发射装置及产生相同阴极冷阴极场发射显示器的方法

摘要

PURPOSE: To provide a cold cathode field electron emission element easily manufactured and capable of coping with a big screen of a display device. CONSTITUTION: This cold cathode field electron emission element is provided with (A) a cathode electrode 11 formed on a support 10, (B) an insulating layer formed on the support 10 including the cathode electrode 11, (C) a gate electrode 13 formed on the insulating layer 12, (D) an opening 14 penetrating the gate electrode 13 and the insulating layer 12, (E) a resistor layer 15e formed on the cathode electrode 11 located at the bottom of the opening 14 and having the tip part in a shape of a drill, and (F) an electron emitting part 17e made of a conductive material whose work function is smaller than that of the material constituting the resistor layer 15e and formed on the tip of the resistor layer 15e reflecting its drill shape.
机译:目的:提供一种冷阴极场电子发射元件,其易于制造并且能够应对显示装置的大屏幕。构成:该冷阴极场电子发射元件具有(A)在支撑体10上形成的阴极电极11,(B)在包含阴极电极11的支撑体10上形成的绝缘层,(C)形成的栅电极13在绝缘层12上,(D)穿过栅电极13和绝缘层12的开口14,(E)在位于开口14底部的阴极电极11上形成的电阻层15e,该电阻层15e的尖端部分位于(F)由导电材料制成的电子发射部分17e,该导电材料的功函小于构成电阻器层15e的材料的功函,并形成在反映其钻孔形状的电阻器层15e的尖端上。

著录项

  • 公开/公告号KR20010020824A

    专利类型

  • 公开/公告日2001-03-15

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号KR20000024726

  • 发明设计人 KIKUCHI KAZUO;KUBOTA SHINJI;SATA HIROSHI;

    申请日2000-05-09

  • 分类号H01J1/30;

  • 国家 KR

  • 入库时间 2022-08-22 01:14:04

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