PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION EQUIPMENT AND MULTI-CLUSTER TYPE DEPOSITION EQUIPMENT

摘要

PURPOSE: A plasma-enhanced chemical vapor deposition(PECVD) equipment is provided to form a good-quality thin film transistor-liquid crystal display(TFT-LCD) panel by forming a layer of a uniform thickness on a large surface of a substrate at a rapid evaporation rate. CONSTITUTION: A susceptor has a substrate on which a layer is formed and a unit for adjusting the temperature of the substrate. The susceptor is included in a chamber wall. At least a part of the chamber wall and a quartz tube constitute a closed structure surrounding the susceptor, and the quartz tube is included inside the chamber wall. At least one injecting unit(410,412,414) induces process gas for forming a layer into the closed structure. A pressure control unit is connected to an external vacuum pump, and has at least one exhaust hole on the chamber wall to maintain uniform vacuum and pressure inside the closed structure. A temperature control unit(430,432) is installed outside the chamber wall to maintain uniform temperature inside a chamber(400). A plasma unit activates the process gas.