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STANDARD CELL STANDARD CELL ARRAY AND SYSTEM AND METHOD FOR PLACING AND ROUTING STANDARD CELLS

机译:标准单元标准单元阵列以及用于布置和路由标准单元的系统和方法

摘要

PURPOSE: To ensure a power source having the most suitable line width by arranging a first power source terminal on a P-type diffusion layer of a P- channel transistor, arranging a second power source terminal on an N-type diffusion layer of an N-channel transistor, and arranging an I/O terminal on first layer metal. CONSTITUTION: A P-channel MOS transistor having a source/drain of a P-type diffusion layer 112 is formed in an N-well 111, and a first power source (VDO) terminal 118 is arranged on the P-type diffusion layer 112 turning to the source of the MOS transistor. Similarly, an N-channel MOS transistor having a source/ drain of an N-type diffusion layer 113 is formed in a P-type substrate region outside the N-well, and a second power source (VSS) terminal 119 is arranged on the N-type diffusion layer turning to the source of the MOS transistor. First layer metal 117 is so arranged that both of the transistors act as inverters, and an output terminal is arranged on the metal 117.
机译:目的:通过在P沟道晶体管的P型扩散层上布置第一电源端子,在N型的N型扩散层上布置第二电源端子,以确保电源具有最合适的线宽沟道晶体管,并在第一层金属上布置I / O端子。构成:具有P型扩散层112的源极/漏极的P沟道MOS晶体管形成在N阱111中,并且第一电源(VDO)端子118布置在P型扩散层112上。转向MOS晶体管的源极。类似地,具有N型扩散层113的源极/漏极的N沟道MOS晶体管形成在N阱外部的P型衬底区域中,并且第二电源(VSS)端子119布置在N型阱上。 N型扩散层转向MOS晶体管的源极。第一层金属117被布置为使得两个晶体管都充当反相器,并且输出端子被布置在金属117上。

著录项

  • 公开/公告号KR20010029851A

    专利类型

  • 公开/公告日2001-04-16

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号KR20000035912

  • 发明设计人 KOZAI ATSUKO;

    申请日2000-06-28

  • 分类号H01L21/82;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:53

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