Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer an upper electrode or a lower electrode of capacitor

摘要

PURPOSE: A method for forming a metal layer using an atomic layer deposition method and a semiconductor device thereof are provided to form a metal layer with a prominent capacity by performing an atomic layer deposition method. CONSTITUTION: TiCl4, TMA(TriMethyl Aluminum), and NH3 are implanted repeatedly according a cycle of TiCl4-TMA-TiCl4-NH3. A TiAlN layer is formed by performing repeatedly the implantation process. In the deposition process, a temperature of a substrate is 300 to 700 degrees centigrade and a pressure of a chamber is 0.1 to 10 Torr. A purge gas is implanted continuously or periodically when the source gas is implanted. A time for implanting the source gas is 0.1 to 1.0 second. Ar, N2, He, and H2 are used as the purge gas.