Semiconductor chip bonding by eutectic alloy balls embedded in anisotropic conducting film

摘要

PURPOSE: A semiconductor chip bonding operation using an amorphous conductive film of alloy and a method for manufacturing the conductive film are provided to stabilize the operation of the film. CONSTITUTION: At first, an amorphous conductive film(12) including a metallic sphere in a heat strict resin is placed on a lead of a lead frame(1) during a semiconductor package operation. The semiconductor integrated electrode pad is aligned to be matched with the lead and is thermally pressed on the lead to provide an electrical path. The metallic sphere has a size between 5 and 10micrometers in the conductive film and has a sheet density of 30 through 150 units per square centimeters by coating Au/Sn, Au/Ge or Au/Sn/Ge with Au, Ni or Au/Ni. during the pressing operation, microwave, thermal energy as well as a pressure are applied simultaneously each of which falls in 100-1000Hz, 50-500 degrees and 5-500kgf/cm2(50-5000Pa), respectively.