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Semiconductor circuit including output buffer circuit and drive circuit for driving output buffer circuit

机译:半导体电路,包括输出缓冲电路和用于驱动输出缓冲电路的驱动电路

摘要

PURPOSE: To provide a semiconductor circuit where fluctuations in an output voltage are small, a ringing noise is hardly produced in the case of outputting the voltage via transistor(TR) in source-follower connection and a required drive capability can be obtained while preventing an excess voltage from being applied to components included in a drive circuit driving the TR. CONSTITUTION: The semiconductor circuit is provided with the 1st TR 3 in source follower connection, the drive circuit 1 that is connected to a gate N1 of the 1st TR 3 and applies a 1st level to the gate N1 in response to an input signal Data T, and a charge pump 2 that is connected to the gate N1 and applies a 2nd level higher than the 1st level to the gate N1 in response to the input signal Data T. Furthermore, the semiconductor circuit may be provided with an internal step-down power supply that steps down the power supply voltage and stabilizes the voltage in addition to the components above. In this case, the internal step-down power supply applies a voltage to the drive circuit 1.
机译:用途:为了提供一种输出电压波动小的半导体电路,在源极跟随器连接中通过晶体管(TR)输出电压时,几乎不会产生振铃噪声,并且可以获得所需的驱动能力,同时又避免了多余的电压被施加到驱动TR的驱动电路中包含的组件上。构成:半导体电路在源极跟随器连接中具有第一TR 3,驱动电路1连接到第一TR 3的栅极N1并响应于输入信号Data T向栅极N1施加第一电平以及电荷泵2,该电荷泵2连接至栅极N1,并响应于输入信号Data T而向栅极N1施加高于第一电平的第二电平。此外,半导体电路可以具有内部降压电路。除上述组件外,还可以降低电源电压并稳定电压的电源。在这种情况下,内部降压电源向驱动电路1施加电压。

著录项

  • 公开/公告号KR20010070342A

    专利类型

  • 公开/公告日2001-07-25

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号KR20000080424

  • 发明设计人 OTSUKI TETSUYA;

    申请日2000-12-22

  • 分类号G11C11/34;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:11

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