首页> 外国专利> A Sensor for Breath Alcohol Measurement Using Porous Silicon and Fabrication Method Thereof

A Sensor for Breath Alcohol Measurement Using Porous Silicon and Fabrication Method Thereof

机译:使用多孔硅的呼吸酒精测量传感器及其制造方法

摘要

PURPOSE: An alcohol sensor and a producing method thereof are provided to produce the alcohol sensor by using porous silicon as a detect material for reduce size of the alcohol sensor while reducing producing cost. CONSTITUTION: A second conductive typed epitaxal layer(30) is formed on a high density silicon substrate(10) of a first conductive type. Herein, a P+ typed substrate having specific resistance of 0.01 ohm cm. Therefore, an ohmic bond is formed without depositing a separate metallic electrode in an anode reaction to form a porous silicon. A porous silicon layer(20) is formed on the high density silicon substrate through ion injection of dopant and selective anode reaction. Moreover, an exposed area of the silicon substrate separated from the porous silicon layer is formed on the epitaxal layer. Then, an electrode unit is formed on the porous silicon layer and the exposed area for detecting alcohol density. Herein, two electrodes(50) are formed at specific portions on the porous silicon layer and the exposed area while forming a protect layer(40) at the other portions of the porous silicon layer and the exposed area to protect elements. Herein, a space between the electrodes is limited by the porous silicon layer. Moreover, the electrodes are formed on an upper end of a wafer to reduce size of an alcohol sensor.
机译:目的:提供一种酒精传感器及其制造方法,以使用多孔硅作为检测材料来制造酒精传感器,以减小酒精传感器的尺寸,同时降低生产成本。构成:第二导电类型的外延层(30)形成在第一导电类型的高密度硅衬底(10)上。在此,P +型基板的比电阻为0.01ohm·cm。因此,在阳极反应中不沉积单独的金属电极以形成多孔硅的情况下形成欧姆键。通过掺杂剂的离子注入和选择性阳极反应,在高密度硅衬底上形成多孔硅层(20)。此外,在外延层上形成与多孔硅层分离的硅基板的暴露区域。然后,在多孔硅层和暴露区域上形成电极单元,以检测醇浓度。这里,在多孔硅层和暴露区域的特定部分上形成两个电极(50),同时在多孔硅层和暴露区域的其他部分上形成保护层(40)以保护元件。在此,电极之间的空间由多孔硅层限制。此外,电极形成在晶片的上端上以减小酒精传感器的尺寸。

著录项

  • 公开/公告号KR20010083745A

    专利类型

  • 公开/公告日2001-09-01

    原文格式PDF

  • 申请/专利权人 CHANGWON METAL CO.;KIM SEONG JEEN;

    申请/专利号KR20000008266

  • 发明设计人 KIM SEONG JEEN;

    申请日2000-02-21

  • 分类号G01N27/00;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:56

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