SILICON INTERCONNECT PASSIVATION AND METALLIZATION PROCESS OPTIMIZED TO MAXIMIZE REFLECTANCE

摘要

A metal surface having an optimal reflectivity can be produced by using alone or in a combination of the following process steps: 1) CMP of the dielectric layer overlying the metal after the SOG planarization; 2) CMP of the dielectric layer overlying the metal after the formation of the bias; 3) forming a metal adhesion layer composed of titanium in the dielectric parallel to the overlying; 4) comprising: a metal deposited on the adhesive layer as a low temperature appropriate for maintaining the small grain size; 5) the step of deposit at least a first layer of the coating to enhance the reflectance prior to the new top of the deposited metal to etch the metal; And 6) a step to deposit an initial layer of coating to enhance the reflectivity at a temperature close as possible to the forming temperature of the metal electrode layer to suppress hillock (hillock) formed in the metal. Deposition of the REC are used for two different purposes. First, REC will preserve metal at the high-reflectance state by coating the freshly deposited metal layer immediately after the illustration when depot. Second, REC results in a structural interference of the light reflected by the metallic layer. This structural interference can result in a greater reflectivity than the reflectivity of the exposed metal surface.