A method for producing a high volts is suitable, in the case of an edge termination according to the principle of the lateral charge compensation, prefabricated base material wafer

摘要

The invention relates to a method for producing an edge termination, which is capable of handling high voltages, in a base material wafer prefabricated according to the principle of lateral charge compensation. The edge termination (4) is placed in the prefabricated base material wafer by implanting a rapidly diffusing dopant such as, in particular, selenium or sulfur.