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Power transistor has overvoltage protection stage that does not work against gate drive source and reliably prevents occurrence of avalanche operating state

机译:功率晶体管具有过压保护级,不能与栅极驱动源一起工作,并可靠地防止雪崩操作状态的发生

摘要

The power transistor has an overvoltage protection stage to prevent an avalanche operating state, with at least one control gate (10) for a main current channel between drain (12) and source (14) connections of a main transistor (8) and at least one auxiliary gate (20) for an auxiliary current channel between drain (16) and source (18) connections of an auxiliary transistor (9). The auxiliary gate is connected to the drain connections via a blocking protective Zener diode (21).
机译:功率晶体管具有过压保护级,可防止雪崩运行状态,在主晶体管(8)的漏极(12)和源极(14)连接之间至少有一个用于主电流通道的控制栅极(10),至少有一个一个辅助栅极(20),用于辅助晶体管(9)的漏极(16)和源极(18)连接之间的辅助电流通道。辅助栅极通过一个保护性齐纳二极管(21)连接到漏极连接。

著录项

  • 公开/公告号DE10001876C1

    专利类型

  • 公开/公告日2001-04-19

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2000101876

  • 发明设计人 DEBOY GERALD;

    申请日2000-01-18

  • 分类号H01L23/62;H01L29/78;H03K17/081;

  • 国家 DE

  • 入库时间 2022-08-22 01:09:59

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