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An implantation mask for high energy ion implantation
An implantation mask for high energy ion implantation
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机译:用于高能离子注入的注入掩模
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摘要
The invention relates to a re-usable implantation mask (5), preferably made of silicon, comprising specially structured trenches and holes(2 or 3), which is provided directly or at a distance from a device wafer (7). The invention also relates to a method for adjusting a further processing plane on an implantation plane in a semiconductor wafer (7) fitted with one such implementation mask.
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