Read amplifier circuit for semiconductor memory has shunt resistor connected to reference cell to receive signals from differential amplifier connected in common to shunt resistor and reference cell

摘要

A shunt resistor (116) is connected to a reference cell (108) to receive signals from a differential amplifier (118) which is connected in common to the shunt resistor and the reference cell by a data line (DL) and a reference line (RDL) in accordance with the logic status of a memory location (102), and to output either a high level voltage or a low level voltage to the base of the reference line. The memory location has either a first threshold voltage or a second threshold voltage. The reference cell has a third threshold voltage between the first threshold voltage and the second threshold voltage. A first load transistor (106) is connected between a supply voltage and the data line connected to the memory location. A second load transistor (112) is connected between the supply voltage and the reference line connected to the reference cell.