Solution for selective etching of nickel or alloy from material also contain other metals, useful in e.g. semiconductor device or circuit board manufacture, contains nitric and sulfuric acids, oxidant, chloride ions and water

摘要

Solution for selective etching of nickel (Ni) or Ni alloys from material containing Ni (alloy) and other metals comprises 5-55 wt.% nitric acid, 0.5-40 wt.% sulfuric acid, 0.1-20 wt.% main oxidant, selected from peroxides, nitrates and aromatic nitro compounds, and 0.0001-0.5 wt.% chloride ions, rest water. An Independent claim is also included for a process for etching the cited materials with this solution.