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part with at least one widerstandselement broken capacitor and methods for its manufacture
part with at least one widerstandselement broken capacitor and methods for its manufacture
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机译:至少有一个宽间隔隔离的损坏电容器的零件及其制造方法
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摘要
A semiconductor component, has a capacitor (3) connected in parallel with a resistive element (5) of lower resistance than the capacitor dielectric (34). A semiconductor component has: (a) a capacitor (3) comprising a metal oxide layer (34) in which a remnants electric polarization is induced by a preselected voltage difference between the capacitor electrodes (32, 36); and (b) a resistive element (5) which has a predetermined resistance lower than that of the metal oxide layer (34) and which is electrically connected between the electrodes (32, 36). An Independent claim is also included for production of the above semiconductor component. Preferred Features: The resistive element (5) has a resistance of 1 M OMEGA to 100 G OMEGA , especially 10-100 M OMEGA , and consists of polysilicon, a conductive nitride, a silicide or a doped region of the metal oxide layer (34).
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机译:半导体部件具有与电阻比电容器电介质(34)低的电阻元件(5)并联连接的电容器(3)。半导体部件具有:(a)包括金属氧化物层(34)的电容器(3),其中,通过电容器电极(32、36)之间的预选的电压差而引起残留的极化。 (b)电阻元件(5),其具有比金属氧化物层(34)低的预定电阻,并且电连接在电极(32、36)之间。对于上述半导体组件的生产也包括独立权利要求。优选特征:电阻元件(5)的电阻为1 M OMEGA至100 G OMEGA,尤其是10-100 M OMEGA,并且由多晶硅,导电氮化物,硅化物或金属氧化物层的掺杂区域组成(34 )。
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